Products 产品详情


上市日期: 2014-03-20
V DSS??????????????????????? 650? V
I D????????????????????????????? 4? A
P D (T C =25℃)????????? 30? W
R DS(ON)Typ?????????????? 2? ?
CS4N65F A9HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features :
1.?Fast Switching
2. ESD Improved Capability
3.?Low Gate Charge (Typical Data:14.5nC)
3.?Low Reverse transfer capacitances (Typical:8.5pF)
5.?100% Single Pulse avalanche energy Test
Hot Products / 热卖产品 More
2014 - 11 - 06
2014 - 11 - 06